Structure of Bulk MOSFET, IV characteristics, long channel effects, short channel effects, DIBL, Ion and Ioff currents, doping profiles, working mode, limitation of device. Moore’s Law and Scaling, Short Channel MOSFETs, Reduced source/drain separation, 2-dimensional electric-field profile, Strong electric field in channel, Short Channel Effects, Punch-through, Channel Length Modulation, Threshold voltage (Vt) roll-off, Drain Induced Barrier Lowering (DIBL), Subthreshold swing (SS) degradation, Mobility reduction due to transverse fields, Velocity saturation, Impact ionization near drain, Parasitic bipolar effect, Velocity overshoot