Module 6: Process Integration
Aims
To explain basic structure of semiconductor power devices (Power diode, Power MOSFET, Power BJT, IGBT) used in power electronic circuits, to understand their characteristics, to make the analysis and design of power devices, to understand switching characteristics of PED.
Objectives
The goal of this module is to equip students with in-depth knowledge of the various types of power semiconductor devices, including traditional silicon-based devices (MOSFETs, diodes, thyristors, IGBTs, BJTs) and next-generation devices based on materials such as SiC and GaN. Students will also gain an understanding of the operation, design, and applications of these devices in power electronics.
Syllabus
- Silicon-Based Power Devices
- MOSFET: Structure, operation, and fabrication steps
- Diodes: PN junction, Schottky, and fabrication steps
- IGBT (Insulated Gate Bipolar Transistor): Structure and fabrication steps
- Thyristors: Structure and fabrication steps
- BJT (Bipolar Junction Transistor): Structure and fabrication steps
- Silicon Carbide (SiC) Devices
- Overview of SiC material properties
- SiC MOSFETs: Structure, performance, and fabrication steps
- SiC Schottky Diodes: Structure, performance, and fabrication steps
- SiC vs Si-based power devices: Structure, performance, and fabrication steps
- Gallium Nitride (GaN) Devices
- Properties of GaN as a semiconductor material
- GaN HEMTs (High Electron Mobility Transistors): Design and operation, Structure, performance, and fabrication steps
- Advantages of GaN devices in high-frequency, high-power applications
- GaN vs SiC in terms of performance and application areas
TCAD Laboratory
The TCAD laboratory for power semiconductor devices aims to provide students with hands-on experience in simulating and analyzing the behavior of different power devices, including traditional silicon-based devices (e.g., MOSFETs, IGBTs) as well as next-generation wide bandgap materials (SiC, GaN). The objective is to enable students to understand the device physics behind power semiconductors and to compare the performance of silicon and wide bandgap devices under various conditions using TCAD simulation tools.
Key Learning Outcomes
- Develop a deep understanding of the operational principles of power devices such as MOSFETs, diodes, and IGBTs through simulation.
- Simulate and analyze the performance of Si-based and wide bandgap (SiC, GaN) power devices.
- Explore the effects of device architecture and material properties on parameters like breakdown voltage, switching speed, and thermal management.
- Compare the performance of silicon-based and wide bandgap devices in high-power and high-frequency applications.
- Use TCAD tools to optimize power device design for specific applications, such as energy efficiency and switching performance.
Experiments to Conduct
- Silicon Power MOSFET Simulation: Simulate the IV characteristics, threshold voltage, and switching behavior of a silicon MOSFET.
- SiC MOSFET Simulation: Model the performance of a SiC MOSFET and compare its efficiency.
- IGBT Simulation: Simulate the turn-on and turn-off characteristics of an IGBT and analyze its use in high-voltage applications.
- Schottky Diode Simulation: Simulate a SiC Schottky diode and compare its characteristics to a silicon PN diode.
- GaN HEMT Simulation: Investigate the high-frequency performance of a GaN-based HEMT and explore its advantages over traditional silicon power devices.
- Device Comparison Study: Simulate and compare the performance of Si, SiC, and GaN power devices in terms of breakdown voltage, switching speed, and thermal management under different operational conditions.

- Instructor : Prof Assen Asenov
- Duration : 5 Hours
- Language : English
- Certificate : Yes
- Access : Lifetime

Module 6: Process Integration
- Instructor : Prof Assen Asenov
- Duration : 5 Hours
- Language : English
- Certificate : Yes
- Access : Lifetime
Aims
The goal of this module is to equip students with in-depth knowledge of the various types of power semiconductor devices, including traditional silicon-based devices (MOSFETs, diodes, thyristors, IGBTs, BJTs) and next-generation devices based on materials such as SiC and GaN. Students will also gain an understanding of the operation, design, and applications of these devices in power electronics.
Objectives
By the end of this module, students should be able to:
- Identify and understand the operational principles of silicon-based power devices such as MOSFETs, diodes, and IGBTs.
- Compare fabrication steps of silicon, SiC, and GaN devices in high-power and high-frequency applications.
- Explore the latest innovations in device architecture such as HEMTs (High Electron Mobility Transistors) .
Syllabus
- Silicon-Based Power Devices
- MOSFET: Structure, operation, and fabrication steps
- Diodes: PN junction, Schottky, and fabrication steps
- IGBT (Insulated Gate Bipolar Transistor): Structure and fabrication steps
- Thyristors: Structure and fabrication steps
- BJT (Bipolar Junction Transistor): Structure and fabrication steps
- Silicon Carbide (SiC) Devices
- Overview of SiC material properties
- SiC MOSFETs: Structure, performance, and fabrication steps
- SiC Schottky Diodes: Structure, performance, and fabrication steps
- SiC vs Si-based power devices: Structure, performance, and fabrication steps
- Gallium Nitride (GaN) Devices
- Properties of GaN as a semiconductor material
- GaN HEMTs (High Electron Mobility Transistors): Design and operation, Structure, performance, and fabrication steps
- Advantages of GaN devices in high-frequency, high-power applications
- GaN vs SiC in terms of performance and application areas
TCAD Laboratory
The TCAD laboratory for power semiconductor devices aims to provide students with hands-on experience in simulating and analyzing the behavior of different power devices, including traditional silicon-based devices (e.g., MOSFETs, IGBTs) as well as next-generation wide bandgap materials (SiC, GaN). The objective is to enable students to understand the device physics behind power semiconductors and to compare the performance of silicon and wide bandgap devices under various conditions using TCAD simulation tools.
Key Learning Outcomes
- Develop a deep understanding of the operational principles of power devices such as MOSFETs, diodes, and IGBTs through simulation.
- Simulate and analyze the performance of Si-based and wide bandgap (SiC, GaN) power devices.
- Explore the effects of device architecture and material properties on parameters like breakdown voltage, switching speed, and thermal management.
- Compare the performance of silicon-based and wide bandgap devices in high-power and high-frequency applications.
- Use TCAD tools to optimize power device design for specific applications, such as energy efficiency and switching performance.
Experiments to Conduct
- Silicon Power MOSFET Simulation: Simulate the IV characteristics, threshold voltage, and switching behavior of a silicon MOSFET.
- SiC MOSFET Simulation: Model the performance of a SiC MOSFET and compare its efficiency.
- IGBT Simulation: Simulate the turn-on and turn-off characteristics of an IGBT and analyze its use in high-voltage applications.
- Schottky Diode Simulation: Simulate a SiC Schottky diode and compare its characteristics to a silicon PN diode.
- GaN HEMT Simulation: Investigate the high-frequency performance of a GaN-based HEMT and explore its advantages over traditional silicon power devices.
- Device Comparison Study: Simulate and compare the performance of Si, SiC, and GaN power devices in terms of breakdown voltage, switching speed, and thermal management under different operational conditions.