Module 5: Semiconductor Fabrication Processes
Aims
This module aims to provide a comprehensive understanding of the key processes involved in semiconductor fabrication. Students will develop a fundamental understanding of the technologies and methodologies used in the creation of integrated circuits (ICs) and discrete semiconductor devices. The module will focus on techniques such as oxidation, diffusion, ion implantation, etching, deposition, epitaxy, metallization, and lithography, as well as process integration techniques in semiconductor manufacturing.
Objectives
By the end of this module, students should be able to:
- Understand the fundamental principles and applications of oxidation, diffusion, and ion implantation in semiconductor fabrication.
- Analyze the various techniques used in etching, deposition, epitaxy, and metallization.
- Develop a clear understanding of lithography and its critical role in the production of semiconductor devices.
- Explore the integration of different fabrication processes to create a complete semiconductor device.
- Investigate the practical challenges and solutions in modern semiconductor manufacturing processes.
Syllabus
- Oxidation
- Thermal oxidation of silicon
- Oxidation kinetics
- Dry vs wet oxidation processes
- Diffusion
- Diffusion theory and mechanisms
- Doping profiles and junction formation
- Diffusion equipment and systems
- 3. Ion Implantation
- Principles of ion implantation
- Dopant distribution and profile control
- Annealing
- Etching
- Wet and dry etching techniques
- Plasma etching and reactive ion etching (RIE)
- Selectivity and anisotropy
- Deposition
- Chemical Vapor Deposition (CVD)
- Physical Vapor Deposition (PVD)
- Atomic Layer Deposition (ALD)
- Epitaxy (Si, SiC, GaN)
- Epitaxial growth techniques
- Homoepitaxy vs heteroepitaxy
- Applications in device manufacturing
- Metallization
- Metal deposition techniques
- Ohmic contacts and Schottky contacts
- Interconnect technology
- Lithography
- Photolithography process
- Mask design and patterning
- Advanced lithography techniques (EUV, DUV)
TCAD Laboratory
The TCAD laboratory for semiconductor fabrication processes aims to provide students with practical experience in simulating and understanding the critical steps in the fabrication of semiconductor devices. Through simulation exercises, students will visualize how changes in fabrication parameters impact device performance, explore the effects of process variations, and learn to optimize fabrication techniques. By using TCAD tools, students will simulate processes like oxidation, diffusion, ion implantation, etching, deposition, and lithography.
Key Learning Outcomes
- Understand the role of process parameters in semiconductor fabrication and their impact on device properties.
- Simulate key fabrication processes, such as thermal oxidation, diffusion, ion implantation, and chemical vapor deposition.
- Visualize how various physical and chemical processes affect doping profiles, layer thickness, and material characteristics.
- Analyze the impact of process variations (e.g., temperature, time, doping concentration) on device characteristics.
- Optimize fabrication processes using TCAD simulations to achieve desired performance metrics (e.g., junction depth, sheet resistance).
Experiments to Conduct
- Oxidation Simulation: Explore the effect of oxidation time and temperature on silicon dioxide thickness.
- Diffusion Simulation: Simulate the diffusion process to observe dopant concentration profiles and junction depths.
- Ion Implantation Simulation: Investigate the effect of implantation dose and energy on dopant distribution and channel formation.
- Etching and Deposition: Model etching profiles and thin-film deposition techniques using physical vapor deposition (PVD) or chemical vapor deposition (CVD).
- Lithography Simulation: Explore the impact of mask design and photolithography on the final patterning of semiconductor wafers.

- Instructor : Prof Assen Asenov
- Duration : 5 Hours
- Language : English
- Certificate : Yes
- Access : Lifetime

Module 5: Semiconductor Fabrication Processes
- Instructor : Prof Assen Asenov
- Duration : 5 Hours
- Language : English
- Certificate : Yes
- Access : Lifetime
Aims
This module aims to provide a comprehensive understanding of the key processes involved in semiconductor fabrication. Students will develop a fundamental understanding of the technologies and methodologies used in the creation of integrated circuits (ICs) and discrete semiconductor devices. The module will focus on techniques such as oxidation, diffusion, ion implantation, etching, deposition, epitaxy, metallization, and lithography, as well as process integration techniques in semiconductor manufacturing.
Objectives
By the end of this module, students should be able to:
- Understand the fundamental principles and applications of oxidation, diffusion, and ion implantation in semiconductor fabrication.
- Analyze the various techniques used in etching, deposition, epitaxy, and metallization.
- Develop a clear understanding of lithography and its critical role in the production of semiconductor devices.
- Explore the integration of different fabrication processes to create a complete semiconductor device.
- Investigate the practical challenges and solutions in modern semiconductor manufacturing processes.
Syllabus
- Oxidation
- Thermal oxidation of silicon
- Oxidation kinetics
- Dry vs wet oxidation processes
- Diffusion
- Diffusion theory and mechanisms
- Doping profiles and junction formation
- Diffusion equipment and systems
- 3. Ion Implantation
- Principles of ion implantation
- Dopant distribution and profile control
- Annealing
- Etching
- Wet and dry etching techniques
- Plasma etching and reactive ion etching (RIE)
- Selectivity and anisotropy
- Deposition
- Chemical Vapor Deposition (CVD)
- Physical Vapor Deposition (PVD)
- Atomic Layer Deposition (ALD)
- Epitaxy (Si, SiC, GaN)
- Epitaxial growth techniques
- Homoepitaxy vs heteroepitaxy
- Applications in device manufacturing
- Metallization
- Metal deposition techniques
- Ohmic contacts and Schottky contacts
- Interconnect technology
- Lithography
- Photolithography process
- Mask design and patterning
- Advanced lithography techniques (EUV, DUV)
TCAD Laboratory
The TCAD laboratory for semiconductor fabrication processes aims to provide students with practical experience in simulating and understanding the critical steps in the fabrication of semiconductor devices. Through simulation exercises, students will visualize how changes in fabrication parameters impact device performance, explore the effects of process variations, and learn to optimize fabrication techniques. By using TCAD tools, students will simulate processes like oxidation, diffusion, ion implantation, etching, deposition, and lithography.
Key Learning Outcomes
- Understand the role of process parameters in semiconductor fabrication and their impact on device properties.
- Simulate key fabrication processes, such as thermal oxidation, diffusion, ion implantation, and chemical vapor deposition.
- Visualize how various physical and chemical processes affect doping profiles, layer thickness, and material characteristics.
- Analyze the impact of process variations (e.g., temperature, time, doping concentration) on device characteristics.
- Optimize fabrication processes using TCAD simulations to achieve desired performance metrics (e.g., junction depth, sheet resistance).
Experiments to Conduct
- Oxidation Simulation: Explore the effect of oxidation time and temperature on silicon dioxide thickness.
- Diffusion Simulation: Simulate the diffusion process to observe dopant concentration profiles and junction depths.
- Ion Implantation Simulation: Investigate the effect of implantation dose and energy on dopant distribution and channel formation.
- Etching and Deposition: Model etching profiles and thin-film deposition techniques using physical vapor deposition (PVD) or chemical vapor deposition (CVD).
- Lithography Simulation: Explore the impact of mask design and photolithography on the final patterning of semiconductor wafers.