Module 4: TCAD based design and optimisation of PED
Aims
To explain TCAD base design and optimisation of power electronics devices includes, breakdown design and optimisation, Si and Schottky power diodes optimisation and trade-off between breakdown voltage, on state resistance and reverse recovery, Si and SiC MOSFETs trade-off between breakdown voltage and on resistance, BJT trade-off between breakdown voltage, on resistance and switching losses. trade-off between breakdown voltage and on state voltage drops.
Objectives
Understanding
Optimization of power electronic devices, break down voltage analysis, drift region doping effect, on-state voltage drops, transient power losses, switching characteristics of different power electronic devices with different compound and Si materials. HEMT characteristics, Thyristor structure.
Knowledge
Appropriate mathematical equations from which physical quantities such as majority and minor carrier concentrations, conductivity, mobility, diffusion coefficient and length and current density may be calculated.
Skills
Use of appropriate mathematical equations to evaluate the electrical properties of power electronic devices.
Syllabus
PED device structures and drift region doping configuration for different breakdown voltages. Optimization on-state voltage drop and breakdown voltage. Reverse recovery and energy losses of optimized devices. Turn and turn off power dissipation for different configured power devices. Ron design and optimization. Safe operating areas. Transients and gain calculations.
TCAD Laboratory
The aim of the laboratory is to consolidate the knowledge and the understanding of the power MOSFET structure. Simulating PED using Technology Computer Aided Design (TCAD) simulations width the industry standard Synopsys TCAD tool Sentaurus. IDVG and IDVD characteristics, MOSFET trade-off between breakdown voltage, on resistance and switching losses. Breakdown voltage and drift region dependency. Transient simulations. Turn and turn-off power dissipation.

- Instructor : Prof Assen Asenov
- Duration : 5 Hours
- Language : English
- Certificate : Yes
- Access : Lifetime

Module 4: TCAD based design and optimisation of PED
- Instructor : Prof Assen Asenov
- Duration : 5 Hours
- Language : English
- Certificate : Yes
- Access : Lifetime
Aims
To explain TCAD base design and optimisation of power electronics devices includes, breakdown design and optimisation, Si and Schottky power diodes optimisation and trade-off between breakdown voltage, on state resistance and reverse recovery, Si and SiC MOSFETs trade-off between breakdown voltage and on resistance, BJT trade-off between breakdown voltage, on resistance and switching losses. trade-off between breakdown voltage and on state voltage drops.
Objectives
Understanding
Optimization of power electronic devices, break down voltage analysis, drift region doping effect, on-state voltage drops, transient power losses, switching characteristics of different power electronic devices with different compound and Si materials. HEMT characteristics, Thyristor structure.
Knowledge
Appropriate mathematical equations from which physical quantities such as majority and minor carrier concentrations, conductivity, mobility, diffusion coefficient and length and current density may be calculated.
Skills
Use of appropriate mathematical equations to evaluate the electrical properties of power electronic devices.
Syllabus
PED device structures and drift region doping configuration for different breakdown voltages. Optimization on-state voltage drop and breakdown voltage. Reverse recovery and energy losses of optimized devices. Turn and turn off power dissipation for different configured power devices. Ron design and optimization. Safe operating areas. Transients and gain calculations.
TCAD Laboratory
The aim of the laboratory is to consolidate the knowledge and the understanding of the power MOSFET structure. Simulating PED using Technology Computer Aided Design (TCAD) simulations width the industry standard Synopsys TCAD tool Sentaurus. IDVG and IDVD characteristics, MOSFET trade-off between breakdown voltage, on resistance and switching losses. Breakdown voltage and drift region dependency. Transient simulations. Turn and turn-off power dissipation.