Module 3: Power Electronic Devices (PED)
Aims
To explain basic structure of semiconductor power devices (Power diode, Power MOSFET, Power BJT, IGBT) used in power electronic circuits, to understand their characteristics, to make the analysis and design of power devices, to understand switching characteristics of PED.
Objectives
Understanding
Differences and structures of power electronic devices. Effect of different compound materials effect on device structures and geometry. Transient tests in power devices. Turn on, conduction and turn off processes. GaN and SiC devices and HEMT structures.
Knowledge
Appropriate mathematical equations from which physical quantities such as IV characteristics and breakdown voltage concept. Appropriate mathematical equations describing the I-V and C-V characteristics of the power electronic devices structures such as IGBT, BJT, MOSFET and DIODE.
Skills
Use of appropriate mathematical equations to evaluate the electrical properties of power electronic devices.
Syllabus
Overview of different power electronic device’s structure. forward bias and reverse bias current-voltage characteristics, breakdown, transient characteristics, test circuits, different working modes of MOSFET. MOSFET, Diode, IGBT, BJT, HEMT drift region doping configuration, turn on and turn off power dissipation, energy losses of PED. IdVd and IdVg characteristics of PED.
TCAD Laboratory
The aim of the laboratory is to consolidate the knowledge and the understanding of the power diode structure. Simulating PED using Technology Computer Aided Design (TCAD) simulations width the industry standard Synopsys TCAD tool Sentaurus. Forward and reverse bias IV characteristics, Breakdown voltage and drift region dependency. Transient simulations. Turn and turn-off power dissipation.
- Instructor : Prof Assen Asenov
- Duration : 5 Hours
- Language : English
- Certificate : Yes
- Access : Lifetime
Module 3: Power Electronic Devices (PED)
- Instructor : Prof Assen Asenov
- Duration : 5 Hours
- Language : English
- Certificate : Yes
- Access : Lifetime
Aims
To explain basic structure of semiconductor power devices (Power diode, Power MOSFET, Power BJT, IGBT) used in power electronic circuits, to understand their characteristics, to make the analysis and design of power devices, to understand switching characteristics of PED.
Objectives
Understanding
Differences and structures of power electronic devices. Effect of different compound materials effect on device structures and geometry. Transient tests in power devices. Turn on, conduction and turn off processes. GaN and SiC devices and HEMT structures.
Knowledge
Appropriate mathematical equations from which physical quantities such as IV characteristics and breakdown voltage concept. Appropriate mathematical equations describing the I-V and C-V characteristics of the power electronic devices structures such as IGBT, BJT, MOSFET and DIODE.
Skills
Use of appropriate mathematical equations to evaluate the electrical properties of power electronic devices.
Syllabus
Overview of different power electronic device’s structure. forward bias and reverse bias current-voltage characteristics, breakdown, transient characteristics, test circuits, different working modes of MOSFET. MOSFET, Diode, IGBT, BJT, HEMT drift region doping configuration, turn on and turn off power dissipation, energy losses of PED. IdVd and IdVg characteristics of PED.
TCAD Laboratory
The aim of the laboratory is to consolidate the knowledge and the understanding of the power diode structure. Simulating PED using Technology Computer Aided Design (TCAD) simulations width the industry standard Synopsys TCAD tool Sentaurus. Forward and reverse bias IV characteristics, Breakdown voltage and drift region dependency. Transient simulations. Turn and turn-off power dissipation.